| PART |
Description |
Maker |
| HY5V52LF |
4Banks x 2M x 32bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT- |
4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS42VM16800H-6BLI IS42VM16800H-75BI IS42VM16800H-7 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
13.56MHz RFID Transponder
MEMORY SPECTRUM
AUTOMOTIVE RELAY
4 Banks x 1M x 32Bit Synchronous DRAM
4Banks x 2M x 32bits Synchronous DRAM
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表
Holtek Semiconductor Inc.
Infineon Technologies AG
厦门宏发电声股份有限公司
Hynix Semiconductor Inc.
Integrated Device Technology, Inc.
|
| W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
| W9864G2JH |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| W9864G2IB |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| MF1117V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE Rx
FOR DIGITAL MOBILE TELEPHONE, Rx
FOR DIGITAL MOBILE TELEPHONE / Rx
GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HYB18M512160BFX HYB18M512160BFX-7.5 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
|
Qimonda AG
|
| HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
| HYE18L512320BF-7.5 HYB18L512320BF-7.5 |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
http://
Qimonda AG
|
